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MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM10HA-HB
* * * * *
IC Collector current .......................... 10A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, Welders, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3.7 7.0 A
1.7 2.4 2.4 1.7
C
4.20.1
B
0.8
39.0MAX.
30.2 19.5MAX. 16.6
6.35
4.75
E
B 3.2 9.0MAX. 24.0MAX.
R2.10.05
0.4
4.2
0.5
LABEL
1.3 2.0
6.35
6.35 0.8
4.75
0.4 Fig. A Fig. B
24.0MAX.
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 10 83 1 10 100 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M4 Typical value 2500 0.98~1.47 10~15 25 Unit V V V V A A W A A C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=10A, IB=40mA IC=-10A (diode forward voltage) IC=10A, VCE=2.0V Min. -- -- -- -- -- -- 250 -- VCC=300V, IC=10A, IB1=60mA, -IB2=200mA -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 10 2.0 1.5 2.5 0.4 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
20 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
IB=100mA
VCE=5.0V
16
IB=40mA 12 IB=20mA 8 IB=10mA 4
DC CURRENT GAIN hFE
IB=60mA
VCE=2.0V
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 0 VCE=2.0V 7 Tj=25C 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 2.6
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE(sat) IB=40mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
3.0
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 4 Tj=25C Tj=125C 10 2 7 5 3 2 10 1 7 5 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
VCC=300V IB1=60mA IB2=-200mA
3
SWITCHING TIME
ton, ts, tf (s)
ts tf
2 IC=10A 1 IC=1A IC=5A 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0
10 0 7 5 3 2 10 -1 10 0
ton 2 3 4 5 7 10 1
Tj=25C Tj=125C 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 -1 VCC=300V IB1=60mA IC=10A Tj=25C Tj=125C ts
REVERSE BIAS SAFE OPERATING AREA
20
Tj=125C IB2=-0.5A
COLLECTOR CURRENT IC (A)
ts, tf (s)
16 IB2=-2.0A
SWITCHING TIME
12
8
tf
4
2 3 4 5 7 10 0
2 3 4 5 7 10 1
0
0
200
400
600
800
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 100 90 100s 50s 200s 1ms DC 500ms
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 1.6
1.4 1.2
Zth (j-c) (C/ W)
1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4
0.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 100
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 2 3 4 5 7 10 1 10 1 7 5 4 3 2 trr (s)
80 Irr (A), Qrr (c)
Irr Qrr
60
40
20
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 7 5 4 VCC=300V 3 IB1=60mA IB2=-200mA 2 Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 2 trr
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 3.0
Zth (j-c) (C/ W)
2.0
1.0
0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s)
Feb.1999

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